| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can establish both full silicide formation of a gate electrode and surface silicide formation of a source/drain diffused layer and reduce the number of manufacturing steps to reduce the manufacturing cost. SOLUTION: A poly-Si gate electrode 7 is patterned on a semiconductor substrate 1. A source/drain diffused layer 19 is formed on the surface of the semiconductor substrate 1 aside the poly-Si gate electrode 7. An insulative sidewall 21a is formed on the side wall of the poly-Si gate electrode 7. An oxide film 31 is selectively formed on the surface of the source/drain diffused layer 19. Then, a metal film 35 is formed on the source/drain diffused layer 19 covered with the oxide film 31 in a manner to cover the poly-Si gate electrode 7 wherein the sidewall 21a is formed. It is heated to change the poly-Si electrode 7 into full silicide and furthermore change the source/drain diffused layer 19 under the oxide film 31 into silicide, so as to form a silicide layer 39. COPYRIGHT: (C)2009,JPO&INPIT
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