发明名称 SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of improving a saturation charge amount of a vertical transfer unit. SOLUTION: This solid-state imaging device 100 comprises; a photodetection unit 20 which converts light into signal charges; the vertical transfer unit 21 which transfers the signal charges obtained by the photodetection unit 20; and a horizontal transfer unit 23 which transfers the signal charges transferred by the vertical transfer unit 21. The vertical transfer unit 21 comprises: transfer electrodes 11 and 101; transfer electrodes 12 and 102 formed alternately with the transfer electrodes 11 and 101 in the transfer direction of the vertical transfer unit 2;, an insulating film 25 formed below the transfer electrodes 11 and 12, and 101 and 102; an n-type impurity region 1 formed below the transfer electrodes 11 and 101 across the insulating film 25; and an n-type impurity region 91 formed below the transfer electrode 12 and 102 with the insulating film 25 interposed and having higher impurity density than the n-type impurity region 1. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008300428(A) 申请公布日期 2008.12.11
申请号 JP20070142186 申请日期 2007.05.29
申请人 PANASONIC CORP 发明人 YONEMURA KOICHI;TSUKAMOTO AKIRA
分类号 H01L27/148;H01L21/339;H01L29/762 主分类号 H01L27/148
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