发明名称 Gate driver circuit for a monolithic microwave integrated circuit power converter
摘要 The invention provides a power converter comprising a gate driver circuit (300) and a DC/DC converter, the gate driver circuit (300) is arranged to supply the DC/DC converter with a switching voltage. Both the gate driver circuit (300) and the DC/DC converter comprise at least one transistor (301-303) and at least one further component (315,321). The DC/DC converter being arranged to convert an input voltage V in to an output voltage V out and to supply V out to a load. The gate driver circuit (300) is designed such that the transistors are in the form of transistors being suitable for being manufactured in an MMIC-process (Monolithic Microwave Integrated Circuit) or RFIC-process (Radio Frequency Integrated Circuit).
申请公布号 EP2001130(A1) 申请公布日期 2008.12.10
申请号 EP20070446006 申请日期 2007.06.05
申请人 SAAB AB 发明人 NILSSON, JOAKIM
分类号 H03K17/0412;H02M1/088 主分类号 H03K17/0412
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