发明名称 METHOD OF POLISHING WAFER
摘要 The wafer polishing apparatus is provided to reduce the process failure of manufacturing the semiconductor and to the slurry and particle by using the ozonated water and hydrogen water. The wafer polishing apparatus comprises as follows. The first polishing step is for providing abrasive to the wafer(10) and polishing the surface of wafer. The second polishing step is for removing particles or the abrasive which remains in the wafer by providing the first polishing liquid of the alkaline including the hydrogen water in the wafer. The third polishing step is for removing particles and the first polishing liquid which remains in the wafer by providing the second polishing liquid of the acidity including the ozonated water in wafer.
申请公布号 KR100873235(B1) 申请公布日期 2008.12.10
申请号 KR20070069984 申请日期 2007.07.12
申请人 SILTRON INC. 发明人 CHOI, EUN SUCK;BAE, SO IK
分类号 H01L21/304 主分类号 H01L21/304
代理机构 代理人
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