| 摘要 |
<p>Disclosed is a reflective TFT substrate (1) comprising a substrate (10), a gate electrode (23), a gate wiring (24), a gate insulating film (30), an n-type oxide semiconductor layer (40), a metal layer (60) separated by a channel portion (41), and a protective insulating film (80) covering the upper side of the glass substrate (10) in such a manner that a pixel electrode (67), a drain wiring pad (68) and a gate wiring pad (25) are exposed. The metal layer (60) serves as a source wiring (65), a drain wiring (66), a source electrode (63), a drain electrode (64) and the pixel electrode (67). ® KIPO & WIPO 2009</p> |
