发明名称 |
Reading and writing method for non-volatile memory with multiple data states |
摘要 |
The invention provides a reading method for a memory with multiple data states by applying a plurality of reading signals to an MIM element coupled to a memory cell. The logic level of the data stored in the memory cell is determined based on the number of the reading signals required to switch the state of the MIM element from a first state to a second state.
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申请公布号 |
US7463524(B2) |
申请公布日期 |
2008.12.09 |
申请号 |
US20060588249 |
申请日期 |
2006.10.27 |
申请人 |
WINBOND ELECTRONICS CORP. |
发明人 |
JANG WEN-YUEH |
分类号 |
G11C11/34;G11C16/04 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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