| 摘要 |
A method of forming the metal wiring the semiconductor device is provided to improve the reliability of the semiconductor device by excellent adhesion between the metal wiring and the insulating layer, and to prevent the diffusion of a metal layer into the insulating layer. The method of forming metal wiring in the semiconductor device comprises as follows. A step is forming the insulating layer(103) having the via hole(105) on the substrate(101). A step is for depositing the preliminary barrier metal layer(109) which is made of the tantalum nitride(TaN) on the insulating layer having the via hole by depositing the tantalum using the nitrogen gas of 10~50sccm flow rate in the PVD(physical vapor deposition) chamber. A step is for forming the barrier metal layer which is made of the tantalum silinitride(TaSiN) by reacting the preliminary barrier metal layer with the silicon. A step is for forming the metal wiring within the via hole.
|
