| 摘要 |
The semiconductor device and manufacturing method thereof are provided to minimize the generation of the leakage current like the gate induced drain leakage in the semiconductor device and to improve the performance of transistor. The manufacturing method of the semiconductor device comprises as follows. The oxide film pattern is selectively formed on the semiconductor substrate(100). The insulating layer pattern covering the constant area from both corner of the oxide film pattern is formed on the semiconductor substrate. The oxide film pattern and semiconductor substrate are etched and the first of both corner and second oxide film patterns(105a, 105b) and the recess(120) are formed. The third oxide film pattern(109) is formed on the semiconductor substrate of the recess and the gate insulating layer(110) composed of the first or the third oxide film pattern is formed. The gate pattern(112) is formed within the recess.
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