| 摘要 |
<p>The light emitting device and manufacturing method thereof are provided to improve the reliability of the emitting device by reducing the stress by the insulating material by using the light emitting structure having no insulating material. The semiconductor light emitting device(100) comprises the first conductivity semiconductor layer(102), the active layer(104), the second conductivity semiconductor layer(106), the edge protection semiconductor layer(107), the reflection electrode layer(108), the conductivity supporting substrate(110). The active layer is formed on the first conductivity semiconductor layer. The second conductivity semiconductor layer is formed on the active layer. The edge protection semiconductor layer is formed in the edge of the second conductivity semiconductor layer. The reflection electrode layer is formed in the upper part of the edge protection semiconductor layer and the second conductivity semiconductor layer. The conductivity supporting substrate is formed on the reflection electrode layer.</p> |
