发明名称 LOW TEMPERATURE CO-FIRED CERAMICS WITH BUFFER LAYER AND METHOD OF MANUFACTURING THE SAME
摘要 A low temperature co-fired ceramic substrate with a buffer layer and a method for manufacturing the same are provided to prevent a crack in a ceramic layer with a low intensity when forming heterojuntion between ceramic layers with different coefficient of thermal expansion. A first ceramic layer(111) has a first coefficient of thermal expansion of 12 to 13 and a high dielectric constant. A second ceramic layer(112) has a second coefficient of thermal expansion of 5 to 10 and a low dielectric constant. A buffer layer(110) is composed of a first region(111') and a second region(112') and is interposed between the first ceramic layer and the second ceramic layer for preventing the crack in a heterojunction of the firs ceramic layer and the second ceramic layer. A plurality of electrode patterns(130) are formed around the ceramic layers to form a penetrating via(120) penetrating the ceramic layers and a buffer layer and a capacitor, and are connected to a penetrating via.
申请公布号 KR100872262(B1) 申请公布日期 2008.12.05
申请号 KR20070110291 申请日期 2007.10.31
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 CHANG, MYUNG WHUN;LEE, JONG MYEON
分类号 H05K1/09 主分类号 H05K1/09
代理机构 代理人
主权项
地址