发明名称 |
LOW TEMPERATURE CO-FIRED CERAMICS WITH BUFFER LAYER AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A low temperature co-fired ceramic substrate with a buffer layer and a method for manufacturing the same are provided to prevent a crack in a ceramic layer with a low intensity when forming heterojuntion between ceramic layers with different coefficient of thermal expansion. A first ceramic layer(111) has a first coefficient of thermal expansion of 12 to 13 and a high dielectric constant. A second ceramic layer(112) has a second coefficient of thermal expansion of 5 to 10 and a low dielectric constant. A buffer layer(110) is composed of a first region(111') and a second region(112') and is interposed between the first ceramic layer and the second ceramic layer for preventing the crack in a heterojunction of the firs ceramic layer and the second ceramic layer. A plurality of electrode patterns(130) are formed around the ceramic layers to form a penetrating via(120) penetrating the ceramic layers and a buffer layer and a capacitor, and are connected to a penetrating via.
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申请公布号 |
KR100872262(B1) |
申请公布日期 |
2008.12.05 |
申请号 |
KR20070110291 |
申请日期 |
2007.10.31 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
CHANG, MYUNG WHUN;LEE, JONG MYEON |
分类号 |
H05K1/09 |
主分类号 |
H05K1/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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