| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for processing a substrate which enables easy removal of a hard-to-peel film, such as ArF resist film. SOLUTION: In this processing method for removing the ArF resist film from a wafer with the ArF resist film, ultraviolet irradiation is given to the ArF resist film and then ozone gas and water vapor are supplied for treatment to the ArF resist film so as to modify the ArF resist film to be water-soluble. By supplying thereafter pure water to the ArF resist film modified to be water-soluble, the ArF resist film is peeled off from the substrate. When the water vapor and ozone are to be supplied to a chamber, the supply of the ozone in relation to the water vapor is lessened, while the water vapor is supplied into the chamber at a fixed flow rate so that dew is not be formed on the wafer held in the chamber. COPYRIGHT: (C)2009,JPO&INPIT
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