| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable semiconductor device and a method of manufacturing the same which can prevent stress migration from causing a break on wiring with a simple configuration and at low cost. SOLUTION: A silicon oxide film is formed on a wiring film formed on a semiconductor substrate 11, and both of the wiring film and the silicon oxide film are processed to a desired pattern by photolithography and etching, so that wiring 13a is formed with the top covered with a silicon oxide film 14a. After that, a silicon nitride film 16 is formed on the semiconductor substrate 11 so as to cover the wiring 13a and the silicon oxide film 14a on the wiring 13a. COPYRIGHT: (C)2009,JPO&INPIT
|
