| 摘要 |
The present invention provides a semiconductor memory device comprising a semiconductor substrate formed of a support substrate, an insulating film formed over the support substrate and a semiconductor layer formed over the insulating film; a MOSFET having a source layer and a drain layer both formed in the semiconductor layer of a transistor forming area set to the semiconductor substrate, and a channel region provided between the source and drain layers; a MOS capacitor having a capacitor electrode which is formed in the semiconductor layer of a capacitor forming area set to the semiconductor substrate and in which an impurity of the same type as the source layer is diffused; and a device isolation layer which insulates and separates between the semiconductor layer formed with the MOSFET and the semiconductor layer formed with the MOS capacitor, wherein the capacitor electrode of the MOS capacitor is formed in polygon and slanting faces enlarged toward the insulating film are provided therearound, and wherein a floating gate electrode is provided which extends from over a channel region of the MOSEFT to over corners of ends on the MOSFET side, of the capacitor electrode and which is opposite to the channel region and the capacitor electrode with a gate insulating film interposed therebetween.
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