| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device with which the semiconductor device having suitable mechanical strength on a contact interface between a conductive bump and a metal pad can be manufactured through simpler processes, and the semiconductor device manufactured by the manufacturing method. SOLUTION: When the semiconductor device is manufactured, a first inter-layer formation stage of forming a LOCOS oxide film 12 where the peripheral edge portion of the metal pad 30 is formed on the top surface RS of the semiconductor substrate 10, a metal film formation stage of forming a metal film to predetermined film thickness on the top surface RS of the semiconductor substrate 10 including the top surface of the LOCOS oxide film 12, and a shaping stage of shaping the plane-view shape of the metal film into a predetermined shape are carried out as a metal pad formation stage. Through the metal pad formation stage, a side sectional-view shape of the top surface of the LOCOS oxide film 12 and the top surface RS of the semiconductor substrate 10 is transferred to the side sectional view shape of the metal pad 30. COPYRIGHT: (C)2009,JPO&INPIT |
