发明名称 METHOD FOR REMOVING POLY SILICON
摘要 Methods for removing poly silicon. In one example embodiment, a method for removing poly silicon that is formed on a silicon wafer includes the steps of growing the poly silicon as a silicon oxide through a thermal oxidation process and removing the silicon oxide using an etching solution.
申请公布号 US2008299682(A1) 申请公布日期 2008.12.04
申请号 US20080133130 申请日期 2008.06.04
申请人 DONGBU HITEK CO., LTD. 发明人 SUN JONG WON
分类号 H01L21/66 主分类号 H01L21/66
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