发明名称 METHOD OF FORMING A RESIST PATTERN AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 <p>Conventionally there have been problems as described below. When a resist coating is formed by spin-coating, it is unavoidable that there is some waste resist material and an edge cleaning step is additionally conducted as necessary. When a thin film is formed on a substrate by using a vacuum system, a special apparatus or facility for evacuating a chamber is needed, causing the manufacturing cost to increase. According to the invention, a wiring fabricating method is characterized by comprising the step of selectively forming a conductive layer by CVD, evaporation, or sputtering, forming a resist mask in contact with the conductive layer by ejecting a composition, etching the conductive layer by using the resist mask and plasma producing means under the atmospheric pressure or under a pressure near the atmospheric pressure, and ashing the resist mask by using the plasma producing means under the atmospheric pressure or under a pressure near the atmospheric pressure. The use efficiency of the materials is improved, and the manufacturing cost is reduced. ® KIPO & WIPO 2009</p>
申请公布号 KR20080106361(A) 申请公布日期 2008.12.04
申请号 KR20087025724 申请日期 2008.10.21
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;KUWABARA HIDEAKI
分类号 H01L21/027;C23C16/44;C23C16/455;C23C16/509;C23C16/54;G02F1/13;G03F7/00;H01L21/285;H01L21/312;H01L21/3213;H01L21/768;H01L27/32;H01L51/00;H01L51/40;H01L51/52 主分类号 H01L21/027
代理机构 代理人
主权项
地址