| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element manufacturing method high in yield by preventing an electrode from peeling off in cleaving process of a wafer. SOLUTION: In the nitride semiconductor laser element manufacturing method, a portion of an n-side electrode 13 formed on a substrate with bad adhesiveness to the substrate is removed by being irradiated with laser light, before cleaving a bar 15 from a wafer 1. Therefore, in cleaving process of the wafer 1, the electrode peeling-off starting from the n-side electrode 13 with bad adhesiveness to the substrate can be prevented. COPYRIGHT: (C)2009,JPO&INPIT
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