| 摘要 |
PROBLEM TO BE SOLVED: To provide a device and method for manufacturing an SiC single crystal by a solution method capable of growing the SiC single crystal without causing cracks, peeling or dropping even when a large diameter seed crystal is used. SOLUTION: In the device, the lower end surface D of a pulling shaft X has a flat part P to be adhered with a seed crystal S and recessed parts E provided in the flat part P. In the manufacturing of the SiC single crystal, the device is used in following way: (1) the flat part P is adhered to the seed crystal and each recessed part E serves as a cavity; or (2) SiC is crystallized from a melt of Si or a Si-based alloy by cooling the melt under such conditions that the seed crystal is brought into contact with the lower end surface D and the melt is arranged in the recessed parts E of the lower end surface D, and the seed crystal is adhered to the lower end surface D by using the crystallized SiC. COPYRIGHT: (C)2009,JPO&INPIT
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