发明名称 |
Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device |
摘要 |
A process of manufacturing a liquid crystal display device of transverse electric-field type, wherein a halftone photomask which is used to form a photoresist pattern has a fully light-shielding area preventing UV irradiation of a portion of an active matrix substrate in which a thin-film transistor element is to be formed, so that the photoresist pattern includes a positive resist portion which has a first thickness and which is formed on the above-indicated portion of the substrate. The halftone mask further has a fully light-transmitting area which permits fully UV transmission therethrough to provide the photoresist pattern with a resist-free area which corresponds to a portion of the substrate in which a contact hole serving as a third connection portion connecting an external scanning-line driver circuit and a scanning-line terminal portion through a junction electrode is to be formed. The photoresist pattern also has a positive resist portion which is formed in the other portion of the substrate and which has a second thickness smaller than the first thickness. Also disclosed in a scan-exposing device used in the process is also disclosed.
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申请公布号 |
US2008297756(A1) |
申请公布日期 |
2008.12.04 |
申请号 |
US20080220781 |
申请日期 |
2008.07.28 |
申请人 |
OBAYASHISEIKOU CO., LTD. |
发明人 |
HIROTA NAOTO |
分类号 |
G02F1/13;G03B27/54;G02F1/1343;G02F1/136;G02F1/1362;G02F1/1368;G03F1/14;G09F9/30;G09F9/35;H01L21/336;H01L29/786 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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