| 摘要 |
PROBLEM TO BE SOLVED: To remove the resist of a substrate by preventing a popping phenomenon, to reduce energy costs when removing the resist, and to simplify an apparatus configuration. SOLUTION: The resist removing apparatus comprises a chamber 2 for storing a substrate 16 (for example, having high-dose ion implantation resist). Ozone gas, unsaturated hydrocarbon gas, and water vapor are supplied to the chamber 2 under pressure lower than atmospheric pressure. As the ozone gas, ultra-high-concentration ozone gas obtained by liquefying and separating only ozone from gas containing ozone based on a difference in vapor pressure and then vaporizing it again is available. Ultrapure water may be supplied to clean the treated substrate 16. The chamber 2 has a susceptor 15 holding the substrate 16. The susceptor 15 is heated to not more than 100°C. For example, a light source 4 emitting infrared rays is available as a means for heating the susceptor. COPYRIGHT: (C)2009,JPO&INPIT
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