| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an oxide thin film transistor element, wherein an etching process condition is optimized by using specific etching gas through a helicon plasma dry etching process and etching selectivity is improved. SOLUTION: The method for preparing the oxide thin film transistor having a substrate, a gate electrode, a gate insulating film, a source electrode, a drain electrode, and a semiconductor thin film includes a step for patterning the gate insulating film or the semiconductor thin film through the helicon plasma dry etching process. COPYRIGHT: (C)2009,JPO&INPIT
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