| 摘要 |
A vertical type CMOS image sensor and a manufacturing method thereof are provided to increase the ratio of light detection per unit area by detecting the light of three pixels in one photodiode. A vertical type CMOS image sensor comprises a plurality of photodiodes(21,31,41), and a plurality of signal processing elements. The photo diode is formed on the substrate(10) perpendicularly with the predetermined depth. The signal processing element is formed to be corresponded to a plurality of photodiodes. The signal processing element transmits the signal generated from the photodiode. The signal processing element is formed on the same plane as the photo diode.
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