发明名称 Functionalized metal nanoparticle, buffer layer including the same and electronic device including the buffer layer
摘要 Disclosed herein is a functionalized metal nanoparticle, a buffer layer including the functionalized metal nanoparticle, and an electronic device including the buffer layer. The buffer layer including the functionalized metal nanoparticle according to example embodiments may improve the injection of electrons or holes and the charge mobility between layers in the electronic device, may form ohmic contacts, and may improve the selectivity between electrodes and the buffer layer at the time of forming the buffer layer on the electrodes, thereby improving the efficiency of the electronic device.
申请公布号 US2008299382(A1) 申请公布日期 2008.12.04
申请号 US20080078778 申请日期 2008.04.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MOON HYUN SIK;PARK JONG JIN;KOO BON WON;HAHN JUNG SEOK;KIM DO HWAN
分类号 B32B5/16 主分类号 B32B5/16
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