| 摘要 |
A semiconductor memory device is provided to prevent the change of a cell current by the location of the selected cell and improve the reliability of reading data. In a semiconductor memory device, a memory cell array(10) is arranged in a matrix shape along with a plurality of parallel bit lines and a plurality of word lines and is composed of a plurality of memory cell. A sense amplifier(11) detects determines a voltage or the current of the bit line and determines read data from each memory cell. A transistor for the clamp is which is connected between the bit lines and is applied at the gate and determines the voltage when charging the bit line. A clamp voltage generating circuit generates a clamp voltage which is larger as the distance to the memory cell is longer.
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