| 摘要 |
The image sensor using the semiconductor nanocrystal using the light conducting property of nano-crystalline is provided to implement the high definition and high-sensitivity by using the undoped semiconductor quantum structure. The image sensor comprises the pixel electrode(230), the photoconductive conversion layer(240R, 240G, 240B), the color filter(250R, 250G, 250B), the common electrode(260) formed on the semiconductor substrate(210). The photoconductive conversion layer includes the semiconductor nanocrystal. The insulating layer(220) is laminated on the surface of the semiconductor substrate. The electric charge transportation means is buried in the insulating layer.
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