发明名称 Electrical interconnection structure formation
摘要 An electrical interconnection structure. The electrical structure comprises a substrate comprising electrically conductive pads and a first dielectric layer over the substrate and the electrically conductive pads. The first dielectric layer comprises vias. A metallic layer is formed over the first dielectric layer and within the vias. A second dielectric layer is formed over the metallic layer. A ball limiting metallization layer is formed within the vias. A photoresist layer is formed over a surface of the ball limiting metallization layer. A first solder ball is formed within a first opening in the photoresist layer and a second solder ball is formed within a second opening in the photoresist layer.
申请公布号 US7459785(B2) 申请公布日期 2008.12.02
申请号 US20070941165 申请日期 2007.11.16
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DAUBENSPECK TIMOTHY HARRISON;GAMBINO JEFFREY PETER;MUZZY CHRISTOPHER DAVID;SAUTER WOLFGANG
分类号 H01L23/52;H01L23/44 主分类号 H01L23/52
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