| 摘要 |
To detect a magnetic flux density of a magnetic field applied from an outside, a semiconductor magnetic sensor of the present invention includes: a transistor (MP101) formed on a side of one, side of a hall element (100), for driving the hall element (100), the transistor (MP101) having a drain connected to a terminal (C101) formed on the one side; a transistor (MP102) formed on the side of the one side and having a drain connected to a terminal (C102) formed on the one side; a transistor (MN101) formed on a side of another side opposite to the one side and having a drain connected to a terminal (C103) formed on the another side; a transistor (MN102) formed on the side of the another side and having a drain connected to a terminal (C104) formed on the another side.
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