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发明名称
制造平滑晶圆之方法
摘要
本发明系关于一种经由结合半导体晶圆之粗略研磨与热退火而降低该晶圆之表面粗糙度的方法。
申请公布号
TW200847251
申请公布日期
2008.12.01
申请号
TW096149804
申请日期
2007.12.24
申请人
MEMC电子材料公司
发明人
赖瑞W 雪夫;布莱恩L 吉尔莫尔
分类号
H01L21/302(2006.01);C30B33/00(2006.01)
主分类号
H01L21/302(2006.01)
代理机构
代理人
陈长文
主权项
地址
美国
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