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发明名称
用于驱动积体电路之无凹状金凸块
摘要
一种用于积体电路(IC)结构之导电性凸块结构,其系包含诸如氧化矽/氮化矽堆叠之被动层,该被动层系形成于IC之各个导电性接点垫(例如Al垫)的上方表面之上。复数个开口延伸穿过被动层而暴露该接点垫之上方表面的区域。该等开口在纵向尺寸上系比横向尺寸更大。较佳地,包含金(Au)之导电性凸块系形成于被动层之上,而延伸穿过该被动层中之该等开口,且与接点垫之所曝露的上方表面区域电性接触。
申请公布号
TW200847306
申请公布日期
2008.12.01
申请号
TW096123192
申请日期
2007.06.27
申请人
国家半导体公司
发明人
海扬 铭
分类号
H01L21/60(2006.01)
主分类号
H01L21/60(2006.01)
代理机构
代理人
桂齐恒;阎启泰
主权项
地址
美国
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