METHOD OF MANUFACTURING TENSILE-STRAINED GERMANIUM THIN FILM, TENSILE-STRAINED GERMANIUM THIN FILM, AND MULTILAYER FILM STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a multilayer film structure in which relaxation of strain of a germanium tin mixed crystal layer is promoted and a tensile-strained germanium layer with a larger in-plane tensile strain can be formed. SOLUTION: The method of forming a suitable multilayer film structure 10 on a semiconductor device includes the step of forming a germanium layer 12 over a silicon substrate 11, forming a germanium tin mixed crystal layer 13 over the germanium layer, and forming a tensile-strained germanium layer 14 over the germanium tin mixed crystal layer. COPYRIGHT: (C)2009,JPO&INPIT