| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device for realizing high speed, low loss, and highly efficient signal charge transfer by low-voltage drive. SOLUTION: A signal charge transfer channel region comprises first polysilicon gate electrodes as storage electrodes for storing the signal charge, and second polysilicon gate electrodes as barrier electrodes for transferring the signal charge stored under these first polysilicon gate electrodes to under the adjacent first polysilicon gate electrodes. Both ends of the two or more first and second polysilicon gate electrodes are alternately arranged perpendicularly to the transfer direction of the signal charge, and their central parts are alternately arranged abliquely to the transfer direction of the signal charge. The semiconductor layer under the two or more second polysilicon gate electrodes is formed of a first diffusion layer, a second diffusion layer, and a third diffusion layer having successively different depths of these P+ diffusion layers in the direction horizontal to the transfer direction of the signal charge. COPYRIGHT: (C)2009,JPO&INPIT
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