TUNNEL TYPE MAGNETIC DETECTOR ELEMENT

摘要

[PROBLEMS] To improve a material of an undercoat layer and seed layer in a tunnel type magnetic detection element having an insulation partition layer formed from Mg-O so as to increase a resistance change ratio (?R/R) as compared to a conventional tunnel type magnetic detection element. [MEANS FOR SOLVING PROBLEMS] An insulation partition layer (5) is formed from Mg-O. An undercoat layer (1) is formed from Ti. A seed layer (2) is formed from Ni-Fe-Cr or Ru. Thus, it is possible to increase the resistance change ratio (?R/R) as compared to the conventional technique while reducing the RA to the same extent as in the conventional technique.