METHOD FOR MANUFACTURING SINGLE CRYSTAL

摘要

An evaporation rate formula for calculating a dopant evaporation rate is derived by taking into account influence of segregation of a single crystal (6) during manufacture wherein a single crystal pulling apparatus (1) is used, an evaporation area of a volatile dopant and influence of pulling speed. In prescribed timing during pulling, a gas flow quantity to a chamber (30) and pressure inside a furnace are controlled so that a cumulative dopant evaporation quantity calculated from the evaporation rate formula is a prescribed quantity. Thus, a difference between a resistivity profile of the single crystal (6) predicted based on the evaporation rate formula and an actual resistivity profile is reduced. Furthermore, since a volatile dopant is not added afterward, increase of load on an operator, increase of manufacture time, increase of amorphous crystal adhered inside the chamber (30), disturbance in single crystallization and increase of load for cleaning inside the chamber (30) are suppressed.