| 摘要 |
<p>An apparatus (1) for resist removal with which a resist is removed from a substrate while preventing the occurrence of hopping. It attains a reduction in the cost of energy required for resist removal and has a simplified constitution. The resist removal apparatus (1) has a chamber (2) for placing a substrate (16) (e.g., one having a resist which has undergone high-dose ion implantation) therein, and ozone gas, an unsaturated hydrocarbon gas, and water vapor are supplied to the chamber (2) at a pressure lower than atmospheric pressure. Examples of the ozone gas include ultrahigh-concentration ozone gas obtained from an ozone-containing gas by separating the ozone only therefrom by liquefaction based on a difference in vapor pressure and then vaporizing the liquefied ozone again. Ultrapure water is preferably supplied to the treated substrate (16) in order to wash the substrate therewith. The chamber (2) is provided with a susceptor (15) for holding the substrate (16). The susceptor (15) is heated so as to have a temperature of 100°C or lower. An example of a means of heating the susceptor is an illuminator (4) emitting infrared light.</p> |
