发明名称 |
THROUGH VIA IN ULTRA HIGH RESISTIVITY WAFER AND RELATED METHODS |
摘要 |
A through via in an ultra high resistivity wafer and related methods are disclosed. A method for forming a through via comprises: providing a semiconductor wafer including a first silicon layer, a buried dielectric layer, and a substrate; forming a device on the first silicon; and forming a via from a side of the substrate opposite to the buried dielectric layer and through the substrate.
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申请公布号 |
US2008290524(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20070753617 |
申请日期 |
2007.05.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LANZEROTTI LOUIS D.;LEVY MAX G.;SHI YUN;VOLDMAN STEVEN H. |
分类号 |
H01L23/52;H01L21/4763 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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