| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution for metal having a quick copper polishing speed and good copper/tantalum polish selectivity and capable of enhancing planarity by reducing the dishing. <P>SOLUTION: The polishing solution for metal used for chemical mechanical polishing in the wiring process of a semiconductor device contains (A) an oxidizing agent, (B) an organic acid, (C) abrasive grains and (D) a trivalent iron compound in the range of 0.1 ppb-50 ppm. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
