| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a sensing circuit which accurately detects data without reducing a bit line potential upon detection of data and is formed by using a simple circuit arrangement. <P>SOLUTION: A semiconductor storage device is provided with: a memory cell MC; a bit line BL; a capacitor C_SEN; a sense node SEN transmitting potential corresponding to data of the memory cell; a precharge part 10 for charging the bit line, the capacitor and the sense node; a latch part 40 latching data; a sensing transistor TP4 the gate of which is connected to the sense node, and one of the source or the drain of which is connected to a power source while the other is connected to the latch part; and a clamp part 30 connecting a first node between the latch part and the sensing transistor to the bit line. When data are detected, the capacitor supplies a charge to the bit line and the sensing transistor supplies a charge from the power source to the bit line via the clamp part according to the potential of the sense node. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
