发明名称 |
Method for Producing Group 13 Metal Nitride Crystal, Method for Manufacturing Semiconductor Device, and Solution and Melt Used in Those Methods |
摘要 |
A process for producing a Group 13 metal nitride crystal, comprising performing the growth of a Group 13 metal nitride crystal in a solution or melt comprising an ionic solvent having dissolved therein a composite nitride containing a metal element belonging to Group 13 of the Periodic Table and a metal element other than Group 13 of the Periodic Table. According to this production process, a good-quality Group 13 metal nitride crystal can be produced under low or atmospheric pressure by an industrially inexpensive method. |
申请公布号 |
US2008289569(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20060064416 |
申请日期 |
2006.08.11 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
TAHARA TAKESHI;SEKI YOSHINORI;TERADA SHIGERU;TAKEUCHI SACHIE;ARITA YOUJI;KUBOTA KOUHEI |
分类号 |
C30B9/00;C01B21/06;C30B9/12;C30B29/38 |
主分类号 |
C30B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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