| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve light emission efficiency in a semiconductor light-emitting apparatus. <P>SOLUTION: A semiconductor light-emitting apparatus comprises a substrate and a quantum well active layer which comprises a plurality of barrier layers 32 composed of a GaN-based semiconductor and a well layer 30 sandwiched between the barrier layers 32 and composed of the GaN-based semiconductor and which has a polarization charge formed by piezo polarization between the barrier layer 32 and the well layer 30. In the semiconductor light-emitting apparatus, the well layer 30 is formed by modulating the composition so that a handicap becomes minimum at an interface with the barrier layer 32 on a side farther from the substrate 10. <P>COPYRIGHT: (C)2009,JPO&INPIT |
