发明名称 MANUFACTURING METHOD OF ELEMENT HAVING BUMP GROOVE PATTERN
摘要 In case that the interval between bumps is very compactly formed and the pattern is formed in the semiconductor substrate, the groove suitable for the bump pattern can be formed without using the etching process. The method of manufacturing an element having the bump groove is provided. A step(S110) is for preparing the substrate(10). A step(S120) is for laminating a photosensitive material layer by adhering the prepared film(20) to one side of substrate. A step(S130) is for exposing the photosensitive material layer by disposing a mask(30) having the pattern hole(30a) in the upper of the photosensitive material layer. A step(S140) is for developing the photosensitive material layer to remove a portion of the exposed photosensitive material layer according to the pattern of the same pattern ball. A pattern formation step(S150) is for forming the groove(70) on the exposed region of the substrate by spraying the particles(60) on one side of substrate. A step(S160) is for removing the photosensitive material layer.
申请公布号 KR100870840(B1) 申请公布日期 2008.11.27
申请号 KR20070099688 申请日期 2007.10.04
申请人 KOREA SEMICINDUCTOR SYSTEM CO., LTD. 发明人 LEE, SEUNG WOO
分类号 H01L21/60;H01L21/02;H01L23/48 主分类号 H01L21/60
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