发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor device and a method for manufacturing the same are disclosed. The semiconductor device suitable for preventing a threshold voltage of a recess gate from decreasing due to a voltage of an adjacent storage node comprises a semiconductor substrate having an active region which includes a gate area and a storage node contact area and is recess in the gate area; a device isolation structure formed in the semiconductor substrate to define the active region and having a shield layer therein; a recess gate formed in the gate area of the semiconductor substrate; and a storage node formed to be connected with the storage node contact area of the active region.
|
申请公布号 |
US2008290390(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20070852926 |
申请日期 |
2007.09.10 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHA SEON YONG |
分类号 |
H01L29/94;H01L21/339;H01L27/108;H01L27/148;H01L29/76;H01L31/119 |
主分类号 |
H01L29/94 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|