| 摘要 |
PROBLEM TO BE SOLVED: To assure connection between a gate contact and a gate electrode without processing a gate electrode in three-dimensional structure by photolithography. SOLUTION: A semiconductor device 10 is a vertical transistor and comprises first and second silicon pillars 15A and 15B, a first gate electrode 20A which covers the side surface of the silicon pillar 15A through a first gate insulating film 19A, a second gate electrode 20B which covers the side surface of the silicon pillar 15B through a second gate insulating film 19B, a first diffusion layer 18 provided at the lower part of the silicon pillars 15A and 15B, and a second diffusion layer 26 provided at the upper part of the silicon pillar 15B. The second diffusion layer 26 is provided in a through hole which is formed by removing a hard mask used for forming the silicon pillar 15A. The first gate electrode 20A is connected to a gate contact 29c through the second gate electrode 20B. COPYRIGHT: (C)2009,JPO&INPIT |
