| 发明名称 |
Semiconductor light-emitting element and a producing method thereof |
| 摘要 |
A semiconductor light-emitting element 100 is formed including a buffer layer 102, a n-type GaN layer 103, a light-emitting layer 104 and a p-type layer 105 laminated in this order on a sapphire substrate and has a light transmitting electrode 106 made of a needle crystal of ITO.
|
| 申请公布号 |
US2008290364(A1) |
申请公布日期 |
2008.11.27 |
| 申请号 |
US20080153811 |
申请日期 |
2008.05.23 |
| 申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
KAMIYA MASAO;HASEGAWA YUKITAKA;TOTANI SHINGO |
| 分类号 |
H01L33/06;H01L33/32;H01L33/42 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
