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发明名称
PROCESS FOR PRODUCING HIGH QUALITY LARGE SIZE SILICON CARBIDE CRYSTALS
摘要
申请公布号
KR100870680(B1)
申请公布日期
2008.11.26
申请号
KR20077012196
申请日期
2007.05.30
申请人
发明人
分类号
C30B29/36;C30B23/00
主分类号
C30B29/36
代理机构
代理人
主权项
地址
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