Method for forming a fully silicided gate MOSFET and devices obtained thereof,申请号EP20050447277-传众专利搜索

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发明名称	Method for forming a fully silicided gate MOSFET and devices obtained thereof
摘要
申请公布号	EP1744351(A3)	申请公布日期	2008.11.26
申请号	EP20050447277	申请日期	2005.12.09
申请人	INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC);KONINKLIJKE PHILIPS ELECTRONICS N.V.;TEXAS INSTRUMENTS INCORPORATED	发明人	KITTL, JORGE ADRIAN;LAUWERS, ANNE;VELOSO, ANABELA;KOTTANTHARAYIL, ANIL;VAN DAL, MARCUS JOHANNES HENRICUS
分类号	H01L21/28;H01L29/49	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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