发明名称 |
Nonlithographic method of defining geometries for plasma and/or ion implantation treatments on a semiconductor wafer |
摘要 |
<p>A method for defining geometries in a semiconductor wafer supported on a plate electrode in a processing chamber includes forming a reusable refractory coated laminar mask. The reusable refractory coated laminar mask is formed by defining the geometries in a laminar mask substrate, forming apertures through the laminar mask substrate, and forming a layer of refractory material over at least one surface of the laminar mask substrate. The reusable refractory coated laminar mask is positioned over the semiconductor wafer. Treating of the semiconductor wafer is performed through the apertures of the reusable refractory coated laminar mask. The treating may be plasma etching or ion etching.</p> |
申请公布号 |
EP1582922(B1) |
申请公布日期 |
2008.11.26 |
申请号 |
EP20040425243 |
申请日期 |
2004.04.01 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
ALBA, SIMONE;ROMEO, CARMELO |
分类号 |
G03F1/20;G03F7/00;H01L21/302 |
主分类号 |
G03F1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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