发明名称 Halftone phase shifting mask blank, halftone phase shifting mask, and pattern transfer method
摘要 In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom% of silicon and a plurality of metal elements, typically Mo and Zr or Hf.
申请公布号 EP1582920(B1) 申请公布日期 2008.11.26
申请号 EP20050252030 申请日期 2005.03.31
申请人 SHIN-ETSU CHEMICAL CO., LTD.;TOPPAN PRINTING CO., LTD. 发明人 YOSHIKAWA, HIROKI;ISHIHARA, TOSHINOBU;OKAZAKI, SATOSHI;INAZUKI, YUKIO;SAGA, TADASHI;OKADA, KIMIHIRO;IWAKATA, MASAHIDE;HARAGUCHI, TAKASHI;TAKAGI, MIKIO;FUKUSHIMA, YUICHI
分类号 G03F1/00 主分类号 G03F1/00
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