CAPACITIVE PRESSURE SENSOR AND METHOD FOR FABRICATING THE SAME

摘要

A capacitive pressure sensor and a method of manufacture thereof use parylene as the insulating material between the electrodes of the semiconductor sensors so that the manufacturing process is simplified and the property of device is improved. A capacitive pressure sensor comprises an upper substrate and a lower substrate(41). The upper substrate includes a diaphragm formed on an upper first substrate layer in which a pressing area is removed and a upper second substrate layer in which a diaphragm formation area is removed at certain thickness, an upper electrode(34) formed on the surface of the upper second substrate layer including the diaphragm, and a first parylene insulating layer(35) formed on the upper electrode surface except for the electrode contact area for insulation of the upper electrode. The lower substrate includes a lower electrode(42) having a contact metal layer for electrode contact, and a second parylene insulating layer(44) formed on the part except for the electrode contact area for insulation of the lower electrode. The upper substrate and the lower substrate are welded by the first and the second parylene insulating layer.