| 摘要 |
The micro lens is formed firstly and the etch back process for reducing distance between the photo diode and the micro lens is performed. Therefore, the problem for the residue of the pixel region part can be solved. The process margin can be improved. The CMOS image sensor comprises the semiconductor substrate(100) having the circuit part and pixel; a plurality of photo diodes(115) of different depth formed in the semiconductor substrate; an interlayer insulating film(116) whose pixel part is relatively low height compared to the circuit part on the semiconductor substrate; a micro lens(140b) having a curve surface of the inter layer dielectric of the pixel; a light-shielding layer formed on the interlayer insulating film of the circuit part.
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