摘要 |
A gate wire including a gate line extending in a transverse direction and a gate electrode connected to the gate line is form on an insulating substrate. A storage capacitor wire including a storage capacitor electrode line extending in the transverse direction and a storage electrode connected to the storage capacitor electrode line and located at the edges of a pixel area is formed. A semiconductor layer is formed on a gate insulating film covering the gate wire and the storage capacitor wire. A data wire is formed on the gate insulating film or the semiconductor layer and includes a data line intersecting the gate line to define the pixel area, a source electrode connected to the data line and located on the semiconductor layer, a drain electrode formed on the semiconductor layer and located opposite the source electrode with respect to the gate electrode, and a first storage capacitor conductor overlapping the storage capacitor electrode via the gate insulating film to form a storage capacitor. A pixel electrode electrically connected to the drain electrode and the first storage capacitor conductor is formed on the protective layer covering the data wire. |